Apparatus and methods for voltage converter bypass circuits

ABSTRACT

Apparatus and methods for voltage converter bypass circuits are provided. In one embodiment, a voltage conversion system includes a bypass circuit and a voltage converter including an inductor and a plurality of switches configured to control a current through the inductor. The bypass circuit includes a first p-type field effect transistor, a second p-type field effect transistor, a first n-type field effect transistor, and a second n-type field effect transistor. The first and second n-type field effect transistors are electrically in series between a first end and a second end of the inductor. Additionally, the first and second p-type field effect transistor transistors are electrically connected in series between the first end and the second end of the inductor.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/671,022, filed Nov. 7, 2012, titled “APPARATUS AND METHODS FORVOLTAGE CONVERTERS”, which claims the benefit of priority under 35U.S.C. §119(e) of U.S. Provisional Patent Application No. 61/561,676,filed Nov. 18, 2011 titled “APPARATUS AND METHODS FOR VOLTAGECONVERTERS”, each of which are herein incorporated by reference in theirentireties.

BACKGROUND

1. Field

Embodiments of the invention relate to electronic systems, and inparticular, to voltage converters for radio frequency (RF) electronics.

2. Description of the Related Technology

Power amplifiers can be included in mobile devices to amplify a RFsignal for transmission via an antenna. For example, in mobile deviceshaving a time division multiple access (TDMA) architecture, such asthose found in Global System for Mobile Communications (GSM), codedivision multiple access (CDMA), and wideband code division multipleaccess (W-CDMA) systems, a power amplifier can be used to amplify a RFsignal having a relatively low power. It can be important to manage theamplification of a RF signal, as a desired transmit power level candepend on how far the user is away from a base station and/or the mobileenvironment. Power amplifiers can also be employed to aid in regulatingthe power level of the RF signal over time, so as to prevent signalinterference from transmission during an assigned receive time slot.

The power consumption of a power amplifier can be an importantconsideration. One technique for reducing power consumption of a poweramplifier is envelope tracking, in which the voltage level of the powersupply of the power amplifier is changed or varied in relation to theenvelope of the RF signal. Thus, when the envelope of the RF signalincreases, the voltage supplied to the power amplifier can be increased.Likewise, when the envelope of the RF signal decreases, the voltagesupplied to the power amplifier can be decreased to reduce powerconsumption.

A voltage converter, such as a DC-to-DC converter, can be included in anenvelope tracker to reduce the design complexity of the envelope trackerand/or to improve the overall power efficiency of the mobile device. Forexample, an envelope tracker can include a DC-to-DC converter forgenerating a plurality of DC output voltages and an amplifier forgenerating the power amplifier supply voltage by adjusting the magnitudeof the DC output voltage closest in voltage level to the desired poweramplifier supply voltage.

There is a need for improved voltage converters, including, for example,improved voltage converters for use in power amplifier systems.

SUMMARY

In certain embodiments, the present disclosure relates to a voltageconversion system includes a voltage converter and a bypass circuit. Thevoltage converter includes an inductor and a plurality of switchesconfigured to control a current through the inductor. The bypass circuitincludes a first p-type field effect transistor (PFET), a second PFET, afirst n-type field effect transistor (NFET), and a second NFET. Thefirst and second NFET transistors and the first and second PFETtransistors are electrically connected between a first end and a secondend of the inductor such that a source of the first PFET transistor anda drain of the first NFET transistor are electrically connected to thefirst end of the inductor and such that a drain of the second PFETtransistor and a source of the second NFET transistor are electricallyconnected to the second end of the inductor.

In some embodiments, a drain of the first PFET transistor iselectrically connected to a source of the second PFET transistor, to asource of the first NFET transistor, and to a drain of the second NFETtransistor.

In various embodiments, a body of the first PFET transistor iselectrically connected to a battery voltage and a body of the first NFETtransistor is electrically connected to a ground voltage. According tocertain embodiments, a body of the second PFET transistor iselectrically connected to a boost voltage, the boost voltage having amagnitude greater than the battery voltage. In some embodiments, a bodyof the second NFET transistor is electrically connected to a switchablevoltage, and the switchable voltage is configured to be switched betweena voltage equal to about the ground voltage and a voltage greater thanthe ground voltage based on a magnitude of an output voltage generatedby the voltage converter.

In some embodiments, the voltage conversion system further includes afirst level shifter and a second level shifter. The first level shifteris configured to generate gate control signals for a gate of the firstPFET transistor and for a gate of the first NFET transistor, and thesecond level shifter is configured to generate gate control signals fora gate of the second PFET transistor and for a gate of the second NFETtransistor. In certain embodiments, the first level shifter iselectrically powered using the battery voltage and the ground voltage,and the second level shifter is electrically powered using the boostvoltage and the switchable voltage so as to prevent the second PFETtransistor from breakdown between the gate and the drain. According to anumber of embodiments, the voltage conversion system further includes alow drop out regulator configured to generate a regulated voltage, andthe inverter is electrically powered using the regulated voltage and theground voltage. The output of the inverter is configured to generate theswitchable voltage based on an input protection control signal.

In some embodiments, the voltage conversion system further includes adiode having an anode electrically connected to the ground supply and acathode electrically connected to the drain of the first NFETtransistor. The diode is configured to protect the first NFET transistorfrom damage when the first end of the inductor has a voltage less thanthe ground voltage.

In various embodiments, the plurality of switches of the voltageconverter includes a switch having a first end electrically connected tothe first end of the inductor and a second end electrically connected toa ground supply. In a number of embodiments, the voltage converterfurther includes an electrical component disposed in an electrical pathbetween the second end of the switch and the ground supply, and theelectrical component has a resistance. In certain embodiments, a body ofthe first NFET transistor is electrically connected to the second end ofthe switch.

According to some embodiments, the voltage converter includes a switchcontrol block configured to control the plurality of switches togenerate a plurality of output voltages.

In certain embodiments, the present disclosure relates to a bypasscircuit for a voltage converter including an inductor and a plurality ofswitches configured to control a current through the inductor. Thebypass circuit includes a first PFET transistor, a first NFET transistorhaving a drain electrically connected to a source of the first PFETtransistor and to a first end of the inductor, a second PFET transistorhaving a source electrically connected to a drain of the first PFETtransistor, and a second NFET transistor having a drain electricallyconnected to a source of the first NFET transistor and a sourceelectrically connected to a drain of the second PFET transistor and to asecond end of the inductor.

In various embodiments, the drain of the first PFET transistor iselectrically connected to the source of the first NFET transistor and tothe drain of the second NFET transistor.

In some embodiments, the first and second PFET transistors are eachp-type metal oxide semiconductor (PMOS) transistors and the first andsecond NFET transistors are each n-type metal oxide semiconductor (NMOS)transistors.

In a number of embodiments, a body of the first PFET transistor iselectrically connected to a battery voltage and a body of the first NFETtransistor is electrically connected to a ground voltage. In certainembodiments, a body of the second PFET transistor is electricallyconnected to a boost voltage, the boost voltage having a magnitudegreater than the battery voltage. In several embodiments, a body of thesecond NFET transistor is electrically connected to a switchablevoltage, and the switchable voltage is configured to be switchablebetween a voltage equal to about the ground voltage and a voltagegreater than the ground voltage.

According to some embodiments, the bypass circuit further includes afirst level shifter and a second level shifter. The first level shifteris configured to generate gate control signals for a gate of the firstPFET transistor and for a gate of the first NFET transistor, and thesecond level shifter configured to generate gate control signals for agate of the second PFET transistor and for a gate of the second NFETtransistor. In some embodiments, the first level shifter is electricallypowered using the battery voltage and the ground voltage, and the secondlevel shifter is electrically powered using the boost voltage and theswitchable voltage so as to prevent the second PFET transistor frombreakdown between the gate and the drain.

In some embodiments, the bypass circuit further includes a diode havingan anode electrically connected to the ground supply and a cathodeelectrically connected to the drain of the first NFET transistor. Thediode is configured to protect the first NFET transistor from breakdownbetween the body and the drain when the first end of the inductor has avoltage less than the ground voltage.

In certain embodiments, the present disclosure relates to a method ofreducing ringing in a voltage converter including an inductor and aplurality of switches for controlling a current through the inductor.The method includes generating a plurality of output voltages using thevoltage converter and bypassing the inductor using a bypass circuit. Thebypass circuit includes a first PFET, a second PFET, a first NFET, and asecond NFET. The first and second NFET transistors and the first andsecond PFET transistors are electrically connected between a first endand a second end of the inductor such that a source of the first PFETtransistor and a drain of the first NFET transistor are electricallyconnected to the first end of the inductor and such that a drain of thesecond PFET transistor and a source of the second NFET transistor areelectrically connected to the second end of the inductor.

In some embodiments, the method further includes biasing a body of thesecond PFET transistor at a voltage that is greater than a voltage of abody of the first PFET transistor.

In various embodiments, the method further includes biasing a body ofthe first NFET transistor to a ground voltage and biasing a body of thesecond NFET transistor to a switchable voltage.

In according with several embodiments, the method further includesincreasing the voltage of the switchable voltage above that of theground voltage when generating at least one of the plurality of outputvoltages.

In certain embodiments, the present disclosure relates to a wirelessdevice. The wireless device includes a battery having a battery voltage,a voltage converter, and a bypass circuit. The voltage converterincludes an inductor and a plurality of switches configured to control acurrent through the inductor, and the voltage converter is configured togenerate a plurality of output voltages from the battery voltage. Thebypass circuit includes a first PFET, a second PFET, a first NFET, and asecond NFET. The first and second NFET transistors and the first andsecond PFET transistors are electrically connected between a first endand a second end of the inductor such that a source of the first PFETtransistor and a drain of the first NFET transistor are electricallyconnected to the first end of the inductor and such that a drain of thesecond PFET transistor and a source of the second NFET transistor areelectrically connected to the second end of the inductor.

In various embodiments, a drain of the first PFET transistor iselectrically connected to a source of the second PFET transistor, to asource of the first NFET transistor, and to a drain of the second NFETtransistor. In some embodiments, a body of the first PFET transistor iselectrically connected to the battery voltage and a body of the firstNFET transistor is electrically connected to a ground voltage.

In accordance with certain embodiments, a body of the second PFETtransistor is electrically connected to a boost voltage, and the boostvoltage having a magnitude greater than the battery voltage. In certainembodiments, a body of the second NFET transistor is electricallyconnected to a switchable voltage, and the switchable voltage isconfigured to be switched between a voltage equal to about the groundvoltage and a voltage greater than the ground voltage based on amagnitude of one of the plurality of output voltages generated by thevoltage converter.

In certain embodiments, the wireless device further includes a firstlevel shifter and a second level shifter. The first level shifter isconfigured to generate gate control signals for a gate of the first PFETtransistor and for a gate of the first NFET transistor, and the secondlevel shifter is configured to generate gate control signals for a gateof the second PFET transistor and for a gate of the second NFETtransistor. In some embodiments, the first level shifter is electricallypowered using the battery voltage and the ground voltage, and the secondlevel shifter is electrically powered using the boost voltage and theswitchable voltage so as to prevent the second PFET transistor frombreakdown between the gate and the drain.

In certain embodiments, the wireless device further includes a pluralityof output switches and a voltage adjustment module. The plurality ofoutput switches is configured to select amongst the plurality of outputvoltages, and the voltage adjustment module is configured to generate apower amplifier supply voltage by adjusting a voltage magnitude of theselected output voltage.

In several embodiments, the wireless device further includes a poweramplifier configured to receive the power amplifier supply voltage.

In some embodiments, the plurality of output voltages includes at leastone output voltage having a magnitude greater than a magnitude of thebattery voltage.

In certain embodiments, the plurality of output voltages includes atleast one output voltage having a magnitude less than a magnitude of thebattery voltage.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a power amplifier module for amplifyinga radio frequency (RF) signal.

FIG. 2 is a schematic block diagram of an example wireless device thatcan include one or more of the power amplifier modules of FIG. 1.

FIG. 3 is a schematic block diagram of one example of a power amplifiersystem including an envelope tracker.

FIGS. 4A-4C show three examples of power supply voltage versus time.

FIG. 5 is a schematic block diagram of another example of a poweramplifier system including an envelope tracker.

FIG. 6 is a circuit diagram of one embodiment of a multi-level supplycontrol module and a battery.

FIG. 7 is a circuit diagram of one embodiment of a bypass circuit and aninductor.

FIG. 8 is a circuit diagram of one embodiment of a voltage generator forgenerating the switchable voltage of FIG. 7.

FIG. 9 is a circuit diagram of a portion of one example of a buck-boostconverter.

FIG. 10 is a circuit diagram of another embodiment of a bypass circuitand an inductor.

FIG. 11 is a circuit diagram of yet another embodiment of a bypasscircuit and an inductor.

DETAILED DESCRIPTION OF EMBODIMENTS

The headings provided herein, if any, are for convenience only and donot necessarily affect the scope or meaning of the claimed invention.

Overview of Power Amplifier Systems

FIG. 1 is a schematic diagram of a power amplifier module 10 foramplifying a radio frequency (RF) signal. The illustrated poweramplifier module 10 can be configured to amplify an RF signal IN togenerate an amplified RF signal OUT. As described herein, the poweramplifier module 10 can include one or more power amplifiers.

FIG. 2 is a schematic block diagram of an example wireless device 11that can include one or more of the power amplifier modules 10 ofFIG. 1. The wireless device 11 can also include a voltage converterimplementing one or more features of the present disclosure.

The example wireless device 11 depicted in FIG. 2 can represent amulti-band and/or multi-mode device such as a multi-band/multi-modemobile phone. By way of examples, Global System for Mobile (GSM)communication standard is a mode of digital cellular communication thatis utilized in many parts of the world. GSM mode mobile phones canoperate at one or more of four frequency bands: 850 MHz (approximately824-849 MHz for Tx, 869-894 MHz for Rx), 900 MHz (approximately 880-915MHz for Tx, 925-960 MHz for Rx), 1800 MHz (approximately 1710-1785 MHzfor Tx, 1805-1880 MHz for Rx), and 1900 MHz (approximately 1850-1910 MHzfor Tx, 1930-1990 MHz for Rx). Variations and/or regional/nationalimplementations of the GSM bands are also utilized in different parts ofthe world.

Code division multiple access (CDMA) is another standard that can beimplemented in mobile phone devices. In certain implementations, CDMAdevices can operate in one or more of 800 MHz, 900 MHz, 1800 MHz and1900 MHz bands, while certain W-CDMA and Long Term Evolution (LTE)devices can operate over, for example, about 22 radio frequency spectrumbands.

One or more features of the present disclosure can be implemented in theforegoing example modes and/or bands, and in other communicationstandards. For example, 3G, 4G, LTE, and Advanced LTE are non-limitingexamples of such standards.

In certain embodiments, the wireless device 11 can include switches 12,a transceiver 13, an antenna 14, power amplifiers 17, a controlcomponent 18, a computer readable medium 19, a processor 20, a battery21, and a supply control block 22.

The transceiver 13 can generate RF signals for transmission via theantenna 14. Furthermore, the transceiver 13 can receive incoming RFsignals from the antenna 14.

It will be understood that various functionalities associated with thetransmission and receiving of RF signals can be achieved by one or morecomponents that are collectively represented in FIG. 2 as thetransceiver 13. For example, a single component can be configured toprovide both transmitting and receiving functionalities. In anotherexample, transmitting and receiving functionalities can be provided byseparate components.

Similarly, it will be understood that various antenna functionalitiesassociated with the transmission and receiving of RF signals can beachieved by one or more components that are collectively represented inFIG. 2 as the antenna 14. For example, a single antenna can beconfigured to provide both transmitting and receiving functionalities.In another example, transmitting and receiving functionalities can beprovided by separate antennas. In yet another example, different bandsassociated with the wireless device 11 can be provided with differentantennas.

In FIG. 2, one or more output signals from the transceiver 13 aredepicted as being provided to the antenna 14 via one or moretransmission paths 15. In the example shown, different transmissionpaths 15 can represent output paths associated with different bandsand/or different power outputs. For instance, the two example poweramplifiers 17 shown can represent amplifications associated withdifferent power output configurations (e.g., low power output and highpower output), and/or amplifications associated with different bands.Although FIG. 2 illustrates the wireless device 11 as including twotransmission paths 15, the wireless device 11 can be adapted to includemore or fewer transmission paths 15.

In FIG. 2, one or more detected signals from the antenna 14 are depictedas being provided to the transceiver 13 via one or more receiving paths16. In the example shown, different receiving paths 16 can representpaths associated with different bands. For example, the four examplepaths 16 shown can represent quad-band capability that some wirelessdevices are provided with. Although FIG. 2 illustrates the wirelessdevice 11 as including four receiving paths 16, the wireless device 11can be adapted to include more or fewer receiving paths 16.

To facilitate switching between receive and transmit paths, the switches12 can be configured to electrically connect the antenna 14 to aselected transmit or receive path. Thus, the switches 12 can provide anumber of switching functionalities associated with operation of thewireless device 11. In certain embodiments, the switches 12 can includea number of switches configured to provide functionalities associatedwith, for example, switching between different bands, switching betweendifferent power modes, switching between transmission and receivingmodes, or some combination thereof. The switches 12 can also beconfigured to provide additional functionality, including filteringand/or duplexing of signals.

FIG. 2 shows that in certain embodiments, a control component 18 can beprovided for controlling various control functionalities associated withoperations of the switches 12, the power amplifiers 17, the supplycontrol block 22, and/or other operating components.

In certain embodiments, a processor 20 can be configured to facilitateimplementation of various processes described herein. For the purpose ofdescription, embodiments of the present disclosure may also be describedwith reference to flowchart illustrations and/or block diagrams ofmethods, apparatus (systems) and computer program products. It will beunderstood that each block of the flowchart illustrations and/or blockdiagrams, and combinations of blocks in the flowchart illustrationsand/or block diagrams, may be implemented by computer programinstructions. These computer program instructions may be provided to aprocessor of a general purpose computer, special purpose computer, orother programmable data processing apparatus to produce a machine, suchthat the instructions, which execute via the processor of the computeror other programmable data processing apparatus, create means forimplementing the acts specified in the flowchart and/or block diagramblock or blocks.

In certain embodiments, these computer program instructions may also bestored in a computer-readable memory 19 that can direct a computer orother programmable data processing apparatus to operate in a particularmanner, such that the instructions stored in the computer-readablememory produce an article of manufacture including instruction meanswhich implement the acts specified in the flowchart and/or block diagramblock or blocks. The computer program instructions may also be loadedonto a computer or other programmable data processing apparatus to causea series of operations to be performed on the computer or otherprogrammable apparatus to produce a computer implemented process suchthat the instructions that execute on the computer or other programmableapparatus provide steps for implementing the acts specified in theflowchart and/or block diagram block or blocks.

The illustrated wireless device 11 also includes the supply controlblock 22, which can be used to provide a power supply voltage to one ormore of the power amplifiers 17. For example, the supply control block22 can include an envelope tracker configured to change or vary thevoltage level of the supply voltage provided to the power amplifiers 17based upon an envelope of the RF signal to be amplified. However, incertain embodiments the supply control block 22 can include differentcomponents.

The supply control block 22 can be electrically connected to the battery21, and the supply control block 22 can be configured to generate thesupply voltage for the power amplifiers 17. The battery 21 can be anysuitable battery for use in the wireless device 11, including, forexample, a lithium-ion battery. As will be described in detail furtherbelow, by varying the voltage provided to the power amplifiers, thepower consumed from the battery 21 can be reduced, thereby improvingbattery life of the wireless device 11. In certain implementations, thesupply control block 22 can control the power amplifier supply voltagebased on an envelope of the RF signal to be amplified. The envelopesignal can be provided to the supply control block 22 from thetransceiver 13. However, the envelope can be determined in other ways.For example, the envelope can be determined by detecting the envelopefrom the RF signal using any suitable envelope detector.

FIG. 3 is a schematic block diagram of one example of a power amplifiersystem 25 including an envelope tracker 30. The illustrated poweramplifier system 25 includes the envelope tracker 30, a power amplifier32, an inductor 37, an impedance matching block 31, the switches 12, andthe antenna 14. The illustrated envelope tracker 30 is configured toreceive an envelope of the RF signal and to generate a power amplifiersupply voltage V_(CC) _(—) _(PA) for the power amplifier 32.

The illustrated power amplifier 32 includes a bipolar transistor 39having an emitter, a base, and a collector. The emitter of the bipolartransistor 39 can be electrically connected to a ground supply, and aradio frequency (RF) signal can be provided to the base of the bipolartransistor 39. The bipolar transistor 39 can amplify the RF signal andprovide the amplified RF signal at the collector. The bipolar transistor39 can be any suitable device. In one implementation, the bipolartransistor 39 is a heterojunction bipolar transistor (HBT).

The power amplifier 32 can be configured to provide the amplified RFsignal to the switches 12. The impedance matching block 31 can be usedto aid in terminating the electrical connection between the poweramplifier 32 and the switches 12. For example, the impedance matchingblock 31 can be used to increase power transfer and/or reducereflections of the amplified RF signal generated using the poweramplifier 32.

The inductor 37 can be included to aid in biasing the power amplifier 32with the power amplifier supply voltage V_(CC) _(—) _(PA) generated bythe envelope tracker 30. The inductor 37 can include a first endelectrically connected to the envelope tracker 30, and a second endelectrically connected to the collector of the bipolar transistor 39.

Although FIG. 3 illustrates one implementation of the power amplifier32, skilled artisans will appreciate that the teachings described hereincan be applied to a variety of power amplifier structures, such asmulti-stage power amplifier structures and power amplifiers employingother transistor structures. For example, in some implementations thebipolar transistor 39 can be omitted in favor of employing afield-effect transistor (FET), such as a silicon FET, a gallium arsenide(GaAs) high electron mobility transistor (HEMT), or a laterally diffusedmetal oxide semiconductor (LDMOS) transistor.

FIGS. 4A-4C show three examples of power supply voltage versus time.

In FIG. 4A, a graph 47 illustrates the voltage of an RF signal 41 and apower amplifier supply voltage 43 versus time. The RF signal 41 has anenvelope 42.

It can be important that the power supply voltage 43 of a poweramplifier has a voltage greater than that of the RF signal 41. Forexample, providing a power supply voltage to a power amplifier having amagnitude less than that of the RF signal 41 can clip the RF signal,thereby creating signal distortion and/or other problems. Thus, it canbe important the power supply voltage 43 be greater than that of theenvelope 42. However, it can be desirable to reduce a difference involtage between the power amplifier supply voltage 43 and the envelope42 of the RF signal 41, as the area between the power amplifier supplyvoltage 43 and the envelope 42 can represent lost energy, which canreduce battery life and increase heat generated in a mobile device.

In FIG. 4B, a graph 48 illustrates the voltage of an RF signal 41 and apower amplifier supply voltage 44 versus time. In contrast to the poweramplifier supply voltage 43 of FIG. 4A, the power amplifier supplyvoltage 44 of FIG. 4B varies in relation to the envelope 42 of the RFsignal 41. The area between the power amplifier supply voltage 44 andthe envelope 42 in FIG. 4B is less than the area between the poweramplifier supply voltage 43 and the envelope 42 in FIG. 4A, and thus thegraph 48 of FIG. 4B can be associated with a power amplifier systemhaving greater energy efficiency.

FIG. 4C is a graph 49 illustrating a power supply voltage 45 that variesin relation to the envelope 42 of the RF signal 41. In contrast to thepower supply voltage 44 of FIG. 4B, the power supply voltage 45 of FIG.4C varies in discrete voltage increments. Certain embodiments describedherein can be employed in supply control blocks that vary a power supplyvoltage for a power amplifier in discrete increments.

FIG. 5 is a schematic block diagram of another example of a poweramplifier system 50 including an envelope tracker 30. The illustratedpower amplifier system 50 includes the battery 21, the envelope tracker30, the power amplifier 32, a delay control block 33, and a delayelement 34. The envelope tracker 30 includes a multi-level supplycontrol module 51, switches 52, a switch control block 53, and a voltageadjustment module 54.

As shown in FIG. 5, the example power amplifier system 50 can receive anRF signal and an envelope of the RF signal, and can use the envelope togenerate a supply voltage V_(CC) _(—) _(PA) for the power amplifier 32.In order to compensate for delays in generating the power amplifiersupply voltage V_(CC) _(—) _(PA), the delay element 34 and the delaycontrol block 33 can be included. For example, the delay control block33 can be used to control the delay of the delay element 34 based on theenvelope of the RF signal to help align the RF signal and the poweramplifier supply voltage V_(CC) _(—) _(PA).

The multi-level supply control module 51 can be included in the envelopetracker 30 and can be used to generate a plurality of substantially DCoutput voltages from the battery 21. For example, the multi-level supplycontrol module 51 can be used to generate output voltages V_(MLS1),V_(MLS2) and V_(MLS3) from the battery voltage V_(BATT). Although themulti-level supply control module 51 is illustrated as generating threeoutput voltages, the multi-level supply control module 51 can beconfigured to generate more or fewer output voltages. The multi-levelsupply control module 51 can include, for example, a buck-boostconverter or any other suitable DC-to-DC converter.

The switch control block 53 can be configured to select amongst theoutput voltages generated by the multi-level supply control module 51 toaid in providing the power amplifier 32 with an appropriate supplyvoltage. The voltage selected by the switch control block 53 can beadjusted by a voltage adjustment module 54 before being provided to oneor more power amplifiers, such as the power amplifier 32. For example,the voltage adjustment module 54 can include an amplifier configured toprovide linear tracking of the envelope signal to generate the powersupply voltage V_(CC). In certain implementations, the voltageadjustment module 54 can include an amplifier and an adder, and theadder can add an error signal from the amplifier to the output voltageselected by the switches 52 to generate the power amplifier supplyvoltage V_(CC) _(—) _(PA).

By providing both the multi-level supply control module 51 and thevoltage adjustment module 54, constraints on the design of the envelopetracker 30 can be reduced, thereby permitting a system with greaterflexibility and improved power efficiency.

Overview of Voltage Converter Circuits

FIG. 6 is a circuit diagram of one embodiment of a portion of anelectronic system 70 including a multi-level supply control module 72and a battery 21. The multi-level supply control module 72 is configuredto receive a battery voltage V_(BATT) from the battery 21 and togenerate a plurality of output voltages. For example, in theconfiguration illustrated in FIG. 6, the multi-level supply controlmodule 72 is configured to generate a first output voltage V_(MLS1), asecond output voltage V_(MLS2), and a third output voltage V_(MLS3).However, the multi-level supply control module 72 can be configured togenerate more or fewer output voltages.

The multi-level supply control module 72 includes a buck-boost converter73 and a control block 74. The buck-boost converter 73 includes first tosixth switches S₁-S₆, an inductor 75, and a bypass circuit 76. The firstswitch S₁ includes a first end electrically connected to the batteryvoltage V_(BATT) and a second end electrically connected to a first endof the second switch S₂, to a first end of the inductor 75, and to afirst end of the bypass circuit 76 at a node N₁. The second switch S₂further includes a second end electrically connected to a first orground supply V_(GND). Although FIG. 2 illustrates a configuration of avoltage converter that is powered using a ground supply and a batteryvoltage, the teachings herein are applicable to voltage converterspowered using any suitable power high supply and power low supply. Theinductor 75 further includes a second end electrically connected to asecond end of the bypass circuit 76 and to a first end of each of thethird to sixth switches S₃-S₆ at a node N₂. The third switch S₃ furtherincludes a second end electrically connected to the ground supplyV_(GND). The fourth, fifth, and sixth switches S₄-S₆ each include asecond end configured to generate the first, second, and third outputvoltages V_(MLS1), V_(MLS2), and V_(MLS3), respectively.

The control block 74 is configured to receive the first, second, andthird output voltages V_(MLS1), V_(MLS2), and V_(MLS3), and can controlthe buck-boost converter 73 based on the voltage level of the first,second, and third output voltages V_(MLS1), V_(MLS2), and V_(MLS3). Forexample, the control block 74 can be configured to generate controlsignals for turning on and off the first to sixth switches S₁-S₆ tomaintain the first, second, and third output voltages V_(MLS1),V_(MLS2), and V_(MLS3) within a particular error tolerance of targetvoltage levels.

The control module 74 can be configured to control the buck-boostconverter 73 so as to generate one or more boost voltages having amagnitude greater than that of the battery voltage V_(BATT). Forinstance, when the buck-boost converter 73 is operating continuously,the control block 74 can generate a boosted voltage on the first outputvoltage V_(MLS1) by regularly switching the state of the first to sixthswitches S₁-S₆ between a configuration associated with a first boostphase of the buck-boost converter 73 and a configuration associated witha second boost phase of the buck-boost converter 73. For example, duringthe first boost phase of the buck-boost converter 73, the control block74 can be configured to open the second and fourth to sixth switches S₂,S₄-S₆ and to close the first and third switches S₁, S₃ so as to increasethe magnetic field of the inductor 75 by providing a current from thebattery 21 to the ground supply V_(GND) through the inductor 75 and thefirst and third switches S₁, S₃. Additionally, during the second boostphase of the buck-boost converter 73, the control block 74 can beconfigured to close the second and fourth switches S₂, S₄ and to openthe first, third, fifth, and sixth switches S₁, S₃, S₅-S₆ such that themagnetic field of the inductor 75 generates a current from the groundsupply V_(GND) to the first output voltage V_(MLS1) through the inductor75 and the second and fourth switches S₂, S₄.

Although the buck-boost converter 73 has been described as beingoperated over two phases when generating a boost voltage, the buck-boostconverter can be configured to operate using additional phases. Forinstance, the buck-boost converter 73 can be configured to operateintermittently with the control block 74 configured to switch thebuck-boost converter 73 between the first boost phase, the second boostphase, and a third boost phase associated with opening each of the firstto sixth switches S₁-S₆. In some implementations, intermittent operationcan be employed in the buck-boost converter 73 to aid in preventing thebuck-boost converter 73 from over charging the output voltagesV_(MLS1)-V_(MLS3) when the output voltages V_(MLS1)-V_(MLS3) have arelatively light current load.

The control module 74 can also be configured to control the buck-boostconverter 73 so as to generate one or more buck voltages having amagnitude less than that of the battery voltage V_(BATT). For instance,when the buck-boost converter 73 is operating continuously, the controlblock 74 can generate a buck voltage on the third output voltageV_(MLS3) by regularly switching the state of the first to sixth switchesS₁-S₆ between a configuration associated with a first buck phase of thebuck-boost converter 73 and a configuration associated with a secondbuck phase of the buck-boost converter 73. For example, during the firstbuck phase of the buck-boost converter 73, the control block 74 can beconfigured to open the second to fifth switches S₂-S₅ and to close thefirst and sixth switches S₁, S₆ so as to charge the magnetic field ofthe inductor 75 by providing a current from the battery 21 to the thirdoutput voltage V_(MLS3) through the inductor 75 and the first and sixthswitches S₁, S₆. Additionally, during the second buck phase of thebuck-boost converter 73, the control block 74 can be configured to closethe second and sixth switches S₂, S₆ and to open the first and third tofifth switches S₁, S₃-S₅ such that the magnetic field of the inductor 75generates a current from the ground supply V_(GND) to the third outputvoltage V_(MLS3) through the inductor 75 and the second and sixthswitches S₂, S₆.

Although the buck-boost converter 73 has been described as beingoperated over two phases when generating a buck voltage, the buck-boostconverter can be configured to operate using additional phases. Forinstance, the buck-boost converter 73 can be configured to operateintermittently with the control block 74 configured to switch thebuck-boost converter 73 between the first buck phase, the second buckphase, and a third buck phase associated with opening each of the firstto sixth switches S₁-S₆.

The multi-level supply control module 72 can be configured to generateany suitable combination of buck and/or boost voltages. For example, insome implementations, the first and second output voltages V_(MLS1),V_(MLS2) are boost voltages and the third output voltage V_(MLS3) is abuck voltage. However, in other implementations, the buck-boostconverter 73 can be configured to generate all buck or all boostvoltages. Furthermore, the multi-level supply control module 72 can beconfigured to generate more or fewer output voltages.

When generating buck and/or boost voltages using the buck-boostconverter 73, switching of the first to sixth switches S₁-S₆ can lead toringing in the inductor 75. For example, when the control block 74determines that the first, second and third output voltagesV_(MLS1)-V_(MLS3) are each charged to a desired voltage level, thecontrol block 74 may open each of the fourth to sixth switches S₄-S₆.Similarly, when operating intermittently, the buck-boost converter 73may be in a state in which the first to sixth switches S₁-S₆ are eachopened. Energy associated with the magnetic field of the inductor 75 mayresult in voltage spikes on the first node N₁ and/or second node N₂ whentransitioning the first to sixth switches S₁-S₆ between certain states.In certain configurations, the ringing of the inductor 75 can result involtage spikes that can exceed maximum voltage operating conditionsand/or can lead to spurs that can generate receive band noise in theelectronic system 70.

To aid in reducing ringing within the buck-boost converter 73, thebypass circuit 76 has been included. The control block 74 can beconfigured to control the bypass circuit 76 between a deactivated orhigh-impedance state and an activated or low-impedance state. In someimplementations, the control block 74 can be configured to activate thebypass circuit 76 at certain times so as to reduce ringing of theinductor current and to reduce voltage spikes on the first node N₁and/or the second node N₂. For example, when the first to sixth switchesS₁-S₆ are each in an opened state, the control block 74 can activate thebypass circuit 76 so as to electrically short the first node N₁ to thesecond node N₂ and reduce ringing. However, the control block 74 can beconfigured to activate the bypass circuit 76 at other times.

Electrically connecting the bypass circuit 76 in parallel with theinductor 75 can enhance performance of the buck-boost converter 73relative to certain other bypass schemes. For example, electricallyconnecting the bypass circuit 76 in parallel with the buck-boostconverter 73 can offer improved performance relative to a scheme inwhich the first and second nodes N₁, N₂ are shorted to the ground supplyV_(GND) during bypass, since parasitic capacitances associated with thefirst and second nodes N₁, N₂ need not be recharged after bypass andadditional conditioning circuitry for preventing shorts between theoutput voltages V_(MLS1)-V_(MLS3) and the ground supply V_(GND) need notbe included.

FIG. 7 is a circuit diagram 80 of one embodiment of a bypass circuit 86and an inductor 75. The bypass circuit 86 includes a first level shifter91, a second level shifter 92, a first p-type metal oxide semiconductor(PMOS) transistor 93, a second PMOS transistor 94, a first n-type metaloxide semiconductor (NMOS) transistor 95, and a second NMOS transistor96. The bypass circuit 86 includes an input for receiving a bypasscontrol signal BYPASS, and the bypass circuit 86 is electricallyconnected in parallel with the inductor 75. As used herein and aspersons having ordinary skill in the art will appreciate, MOStransistors can have gates made out of materials that are not metals,such as poly silicon, and can have dielectric regions implemented notjust with silicon oxide, but with other dielectrics, such as high-kdielectrics.

The first and second level shifters 91, 92 each include an inputconfigured to receive the bypass control signal BYPASS. The first levelshifter 91 includes a first or non-inverted output electricallyconnected to a gate of the first NMOS transistor 95 and a second orinverted output electrically connected to a gate of the first PMOStransistor 93. The first level shifter 91 is electrically powered usinga battery voltage V_(BATT) and a ground supply V_(GND). The second levelshifter 92 includes a first or non-inverted output electricallyconnected to a gate of the second NMOS transistor 96 and a second orinverted output electrically connected to a gate of the second PMOStransistor 94. The second level shifter 92 is electrically powered usinga boost voltage V_(BOOST) and a switch supply V_(SW).

The first PMOS transistor 93 includes a source electrically connected toa drain of the first NMOS transistor 95 and to a first end of theinductor 75 at the first node N₁. The first PMOS transistor 93 furtherincludes a drain electrically connected to a source of the first NMOStransistor 95, to a drain of the second NMOS transistor 96, and to asource of the second PMOS transistor 94. The first PMOS transistor 93further includes a body electrically connected to the battery voltageV_(BATT), and the first NMOS transistor 95 further includes a bodyelectrically connected to the ground supply V_(GND). The second PMOStransistor 94 further includes a drain electrically connected to asource of the second NMOS transistor 96 at the second node N₂. Thesecond PMOS transistor 94 further includes a body electrically connectedto a boost voltage V_(BOOST), and the second NMOS transistor 96 furtherincludes a body electrically connected to a switchable voltage V_(SW).The first and second PMOS transistors 93, 94 and the first and secondNMOS transistors 95, 96 are electrically connected in a bridge betweenthe first and second ends of the inductor 75.

The voltage levels of the battery voltage V_(BATT), the boost voltageV_(BOOST), and the switchable voltage V_(SW) can have any suitablevoltage level relative to the ground supply V_(GND). In oneimplementation, the battery voltage V_(BATT) ranges between about 2.5 Vand about 5.25 V, and the boost voltage V_(BOOST) is selected to bebetween about 0.15 V to about 2.9 V greater than the battery voltageV_(BATT). In one embodiment, the boost voltage V_(BOOST) is selected tobe one of the output voltages generated using the voltage converter,such as the output voltage of the voltage converter having the largestvoltage magnitude. For example, with reference back to FIG. 6, whenboosting the first output voltage V_(MLS1) of the buck-boost converter73 above the battery voltage V_(BATT), the first output voltage V_(MLS1)can be used as the boost voltage V_(BOOST).

In certain configurations, the switchable voltage V_(SW) is switchablebetween a voltage about equal to the ground supply V_(GND) and a voltagein the range of about 1.7 V to about 1.9 V. Additional details of theswitchable voltage V_(SW) will be described further below. Althoughparticular voltage levels have been described above, other voltagelevels will be readily determined by one of skill in the art.

When the bypass control signal BYPASS is logically high, thenon-inverted and inverted outputs of the first level shifter 91 can beequal to about the voltages of the battery voltage V_(BATT) and theground supply V_(GND), respectively, and the non-inverted and invertedoutputs of the second level shifter 92 can be equal to about thevoltages of the boost voltage V_(BOOST) and the switchable voltageV_(SW), respectively. Thus, the bypass control signal BYPASS and thefirst and second level shifters 91, 92 can be used to turn on the firstand second PMOS transistors 93, 94 and the first and second NMOStransistors 95, 96. However, when the bypass control signal BYPASS islogically low, the non-inverted and inverted outputs of the first levelshifter 91 can be equal to about the voltages of the ground supplyV_(GND) and the battery voltage V_(BATT), respectively, and thenon-inverted and inverted outputs of the second level shifter 92 can beequal to about the voltages of the switchable voltage V_(SW) and theboost voltage V_(BOOST), respectively. Accordingly, the first and secondPMOS transistors 93, 94 and the first and second NMOS transistors 95, 96can be off when the bypass control signal BYPASS is logically low.

The bypass circuit 86 can be included in a voltage converter thatincludes the inductor 75, and can be used to bypass the inductor 75 toreduce ringing. For example, the bypass circuit 86 of FIG. 7 can operateas the bypass circuit 76 in the buck-boost converter 73 of FIG. 6 andcan be used to bypass the inductor 75 when the buck-boost converter 73is operating intermittently and/or during any other suitableconfiguration, such as when the first to sixth switches S₁-S₆ are eachin an opened state. When the bypass circuit 86 of FIG. 7 is included inthe buck-boost converter 73 of FIG. 6, the bypass circuit can beelectrically connected such that the first and second nodes N₁, N₂ ofFIG. 7 correspond to the first and second nodes N₁, N₂ of FIG. 6.

Although the bypass circuit 76 can be used in the buck-boost converter73 of FIG. 6, the bypass circuit 76 can be used in a wide array of ICsand other electronics, including, for example, in buck converters, boostconverters, or voltage converters having different circuit topologies.

The battery voltage V_(BATT) can be generated by a battery, and thus thebattery voltage V_(BATT) can have a voltage level that varies inrelation to the battery charge level. Accordingly, when the battery hasa relatively small charge, the battery voltage can be relatively small.However, a voltage converter can use the battery voltage V_(BATT) togenerate a plurality of output voltages, including boosted outputvoltages that have a voltage greater than the battery voltage V_(BATT).

The first and second PMOS transistors 93, 94 and the first and secondNMOS transistors 95, 96 have been electrically connected in aconfiguration that allows the transistors to have a relatively highvoltage tolerance. For example, the first and second PMOS transistors93, 94 and the first and second NMOS transistors 95, 96 can have amaximum operating voltages, such as maximum gate-drain, gate-source,bulk-drain, and bulk-source breakdown voltages, and the transistors havebeen configured to avoid breaking down even when the energy in themagnetic field of the inductor 75 causes ringing.

For example, to improve the robustness of the bypass circuit 86 tovoltage spikes on the second node N₂, including when the battery voltageV_(BATT) has a relatively low voltage level, the body of the second PMOStransistor 94 has been electrically connected to the boost voltageV_(BOOST) and the body of the second NMOS transistor 96 has beenelectrically connected to the switchable voltage V_(SW). Additionally,in contrast to the first level shifter 91 that is electrically poweredusing the battery voltage V_(BATT) and the ground supply V_(GND), thesecond level shifter 92 has been electrically powered using the boostvoltage V_(BOOST) and the switchable voltage V_(SW).

As will be described in detail below, the boost voltage V_(BOOST) canhave a voltage magnitude that is greater than the voltage magnitude ofthe battery voltage V_(BATT). Additionally, when a voltage converter isgenerating a relatively large output voltage, the switchable voltageV_(SW) can be increased so as to have a voltage magnitude that isgreater than the voltage magnitude of the ground supply V_(GND). Byconfiguring the boost voltage V_(BOOST) and the switchable voltageV_(SW) in this manner, the first and second PMOS transistors 93, 94 andthe first and second NMOS transistors 95, 96 can operate within safeoperating voltage limits, even when the voltage magnitude of the batteryvoltage V_(BATT) is relatively low and/or the second node N₂ has arelatively large voltage swing. Accordingly, the bypass circuit 86 ofFIG. 7 can be employed in a voltage converter to reduce inductor currentringing relative to a scheme omitting the bypass circuit 86. In someimplementations, the bypass circuit 86 does not use high voltage orother special transistors for the first and second PMOS transistors 93,94 and the first and second NMOS transistors 95, 96, thereby reducingcircuit layout area and/or enhancing operational performance of avoltage converter employing the bypass circuit 86. In someimplementations, the bypass circuit 86 uses high voltage or otherspecial transistors in the bypass circuit 86 to allow the voltageconverter to operate at even higher output voltage levels.

Although FIG. 7 illustrates a configuration using MOS transistors, thebypass circuits described herein can use other transistor structures,including, for example, other field effect transistors (FETs).Accordingly, in certain implementations, the transistors 93-96 can bemetal-semiconductor FETs (MESFETS), junction FETs (JFETs), and/or anyother suitable type of transistor.

FIG. 8 is a circuit diagram of one embodiment of a voltage generator 100for generating the switchable voltage V_(SW) of FIG. 7. The voltagegenerator 100 includes a low-dropout regulator (LDO) 101, a firstinverter 102, and a second inverter 103. The voltage generator 100 isconfigured to receive a protection control signal PROTECT. Additionally,the voltage generator 100 is configured to receive the battery voltageV_(BATT) and to generate the switchable voltage V_(SW).

The first inverter 102 includes an input configured to receive theprotect signal PROTECT and an output electrically connected to an inputof the second inverter 103. The second inverter 103 further includes anoutput configured to generate the switchable voltage V_(SW). The LDO 101includes an input configured to receive the battery voltage V_(BATT) andan output configured to generate an LDO voltage V_(LDO). The first andsecond inverters 102, 103 are electrically powered using the LDO voltageV_(LDO) and the ground supply V_(GND).

The voltage generator 100 can be used to generate the switchable voltageV_(SW) such that the switchable voltage V_(SW) has a magnitude thatchanges based on a state of the protection control signal PROTECT. Forexample, when the protection control signal PROTECT is logically high,the voltage generator 100 can be configured to control the magnitude ofthe switchable voltage V_(SW) to be greater than a magnitude of theground supply V_(GND). For example, in some implementations the LDOvoltage V_(LDO) can be configured to be in the range of about 1.7 V toabout 1.9 V, for example, about 1.8 V, and the switchable voltage V_(SW)can be configured to be about equal to the LDO voltage V_(LDO) when theprotection control signal PROTECT is logically high. However, theswitchable voltage V_(SW) can have a voltage magnitude about equal tothe ground supply V_(GND) when the switch is logically low. Althoughparticular voltage levels have been described above, other voltagevalues will be readily determined by one of skill in the art.

With reference to FIGS. 7 and 8, the protect signal PROTECT can beasserted during any suitable time window. For example, when a voltageconverter is generating an output voltage having a relatively largemagnitude, inductor ringing can result in relatively large voltagespikes on the first and/or second ends of the inductor. Accordingly, incertain implementations, the protect signal PROTECT is configured to belogically high so as to increase the switchable voltage V_(SW) when thevoltage converter is generating a relatively large output voltage, suchas a voltage that is greater than the gate-drain breakdown voltage, withrespect to the ground voltage V_(GND), of the second PMOS transistor 94of the bypass circuit. Since the switchable voltage V_(SW) can beprovided to the body of the second NMOS transistor 96 and to the gate ofthe second PMOS transistor 94 through the second level shifter 92,increasing the switchable voltage V_(SW) when generating a large outputvoltage can prevent the drain-body, drain-source, drain-gate, and/ordrain-source voltages of the second PMOS and NMOS transistors 94, 96from exceeding breakdown voltage conditions.

FIG. 9 is a circuit diagram 110 of one example of a portion of abuck-boost converter. The portion of the buck-boost converter includesthe bypass circuit 76, the inductor 75, the second switch S₂, the fourthswitch S₄, a bondwire 111, and a resistor 112.

The bondwire 111 includes a first end electrically connected to anexternal ground supply V_(GND) _(—) _(EXT) and a second end electricallyconnected to the ground supply V_(GND). The resistor 112 includes afirst end electrically connected to the ground supply V_(GND) and asecond end electrically connected to a first end of the second switchS₂. The second switch S₂ further includes a second end electricallyconnected to a first end of the bypass circuit 76 and to a first end ofthe inductor 75 at the first node N₁. The fourth switch S₄ includes afirst end electrically connected to a second end of the bypass circuit76 and to a second end of the inductor 75 at the second node N₂. Thefourth switch S₄ further includes a second end electrically connected tothe first output voltage V_(MLS1).

In some configurations, the buck-boost converter can be used to generatea boosted voltage on the first output voltage V_(MLS1). For example,when the bypass circuit 76 is in a high-impedance state, the second andfourth switches S₂, S₄ are closed, and the magnetic field of theinductor 75 is relatively large, a current can flow from ground supplyV_(GND) to the first output voltage V_(MLS1), as was described earlierin connection with FIG. 6. The flow of current through the inductor 75can cause voltage drops across electrical components disposed along thecurrent path, which can result in the voltage of the first node N₁falling to a relatively low voltage, including a voltage less than theexternal ground supply V_(GND) _(—) _(EXT). For example, the groundsupply V_(GND) can be electrically connected to an external groundsupply V_(GND) _(—) _(EXT) using the bondwire 111, which can have aresistive and/or inductive component. Voltage drops can also come fromother sources, such as voltage drops associated with a resistor 112disposed in an electrical path between the second switch S₂ and theground supply V_(GND) and/or voltage drops across the second switch S₂.In some implementations, the resistor 112 can represent the resistanceof electrical components that are not passive resistors, such astransistor and/or diode structures.

With reference now to FIGS. 7 and 9, when the voltage of the first nodeN₁ falls below the ground supply V_(GND), the body-drain junction of thefirst NMOS transistor 95 can become forward-biased. For example, thebody of the first NMOS transistor 95 can be formed from a p-type well,and the drain of the first NMOS transistor 95 can be formed from ann-type active region. Accordingly, the body-drain junction of the firstNMOS transistor 95 can become forward-biased when the drain voltage ofthe first NMOS transistor 95 decreases below the body voltage of thefirst NMOS transistor 95. A relatively large forward-bias of thebody-drain junction can generate a bulk current that can cause damage tothe first NMOS transistor 95.

FIG. 10 is a circuit diagram 120 of another embodiment of a bypasscircuit 126 and an inductor 75. The bypass circuit 126 includes thefirst level shifter 91, the second level shifter 92, the first PMOStransistor 93, the second PMOS transistor 94, the first NMOS transistor95, the second NMOS transistor 96, and a diode 128. The bypass circuit126 includes an input for receiving a bypass control signal BYPASS, andthe bypass circuit 126 is electrically connected in parallel with theinductor 75.

The bypass circuit 126 of FIG. 10 is similar to the bypass circuit 86 ofFIG. 7. However, in contrast to the bypass circuit 86 of FIG. 7, thebypass circuit 126 of FIG. 10 further includes the diode 128. Forexample, the diode 128 includes an anode electrically connected to theground supply V_(GND) and a cathode electrically connected to the firstnode N₁. Including the diode 128 can aid in protecting the first NMOStransistor 95 from damage when the first node N₁ falls below the groundsupply V_(GND). For example, the diode 128 can be configured to have arelatively large size, and thus can conduct a relatively large currentwhere first node N₁ falls below the ground supply V_(GND), therebyhelping to increase the voltage of the first node N₁ and to prevent thebody-source junction of the first NMOS transistor 95 from conducting arelatively large current.

FIG. 11 is a circuit diagram 130 of yet another embodiment of a bypasscircuit 136 and an inductor 75. The bypass circuit 136 includes thefirst level shifter 91, the second level shifter 92, the first PMOStransistor 93, the second PMOS transistor 94, the first NMOS transistor95, and the second NMOS transistor 96. The bypass circuit 136 includesan input for receiving a bypass control signal BYPASS, and the bypasscircuit 136 is electrically connected in parallel with the inductor 75.

The bypass circuit 136 of FIG. 11 is similar to the bypass circuit 86 ofFIG. 7. However, in contrast to the bypass circuit 86 of FIG. 7, thebody of the first NMOS transistor 95 is electrically connected to athird node N₃ rather than to the ground supply V_(GND). In certainimplementations, the third node N₃ can correspond to the third node N₃of FIG. 9. Accordingly, in some configurations the body of the firstNMOS transistor 95 can be electrically connected to a node within thevoltage converter disposed in a current path between a switch of thevoltage converter and a resistor of the voltage converter.

Applications

Some of the embodiments described above have provided examples inconnection with mobile phones. However, the principles and advantages ofthe embodiments can be used for any other systems or apparatus that haveneeds for voltage converters.

Such voltage converters can be implemented in various electronicdevices. Examples of the electronic devices can include, but are notlimited to, consumer electronic products, parts of the consumerelectronic products, electronic test equipment, etc. Examples of theelectronic devices can also include, but are not limited to, memorychips, memory modules, circuits of optical networks or othercommunication networks, and disk driver circuits. The consumerelectronic products can include, but are not limited to, a mobile phone,a telephone, a television, a computer monitor, a computer, a hand-heldcomputer, a personal digital assistant (PDA), a microwave, arefrigerator, an automobile, a stereo system, a cassette recorder orplayer, a DVD player, a CD player, a VCR, an MP3 player, a radio, acamcorder, a camera, a digital camera, a portable memory chip, a washer,a dryer, a washer/dryer, a copier, a facsimile machine, a scanner, amulti functional peripheral device, a wrist watch, a clock, etc.Further, the electronic devices can include unfinished products.

CONCLUSION

Unless the context clearly requires otherwise, throughout thedescription and the claims, the words “comprise,” “comprising,” and thelike are to be construed in an inclusive sense, as opposed to anexclusive or exhaustive sense; that is to say, in the sense of“including, but not limited to.” The word “coupled”, as generally usedherein, refers to two or more elements that may be either directlyconnected, or connected by way of one or more intermediate elements.Likewise, the word “connected”, as generally used herein, refers to twoor more elements that may be either directly connected, or connected byway of one or more intermediate elements. Additionally, the words“herein,” “above,” “below,” and words of similar import, when used inthis application, shall refer to this application as a whole and not toany particular portions of this application. Where the context permits,words in the above Detailed Description using the singular or pluralnumber may also include the plural or singular number respectively. Theword “or” in reference to a list of two or more items, that word coversall of the following interpretations of the word: any of the items inthe list, all of the items in the list, and any combination of the itemsin the list.

Moreover, conditional language used herein, such as, among others,“can,” “could,” “might,” “can,” “e.g.,” “for example,” “such as” and thelike, unless specifically stated otherwise, or otherwise understoodwithin the context as used, is generally intended to convey that certainembodiments include, while other embodiments do not include, certainfeatures, elements and/or states. Thus, such conditional language is notgenerally intended to imply that features, elements and/or states are inany way required for one or more embodiments or that one or moreembodiments necessarily include logic for deciding, with or withoutauthor input or prompting, whether these features, elements and/orstates are included or are to be performed in any particular embodiment.

The above detailed description of embodiments of the invention is notintended to be exhaustive or to limit the invention to the precise formdisclosed above. While specific embodiments of, and examples for, theinvention are described above for illustrative purposes, variousequivalent modifications are possible within the scope of the invention,as those skilled in the relevant art will recognize. For example, whileprocesses or blocks are presented in a given order, alternativeembodiments may perform routines having steps, or employ systems havingblocks, in a different order, and some processes or blocks may bedeleted, moved, added, subdivided, combined, and/or modified. Each ofthese processes or blocks may be implemented in a variety of differentways. Also, while processes or blocks are at times shown as beingperformed in series, these processes or blocks may instead be performedin parallel, or may be performed at different times.

The teachings of the invention provided herein can be applied to othersystems, not necessarily the system described above. The elements andacts of the various embodiments described above can be combined toprovide further embodiments.

While certain embodiments of the inventions have been described, theseembodiments have been presented by way of example only, and are notintended to limit the scope of the disclosure. Indeed, the novel methodsand systems described herein may be embodied in a variety of otherforms; furthermore, various omissions, substitutions and changes in theform of the methods and systems described herein may be made withoutdeparting from the spirit of the disclosure. The accompanying claims andtheir equivalents are intended to cover such forms or modifications aswould fall within the scope and spirit of the disclosure.

1. (canceled)
 2. A voltage conversion system comprising: a voltageconverter including an inductor, a plurality of switches, and a bypasscircuit, the bypass circuit including a first p-type field effecttransistor, a second p-type field effect transistor, a first n-typefield effect transistor, and a second n-type field effect transistor,the first and second n-type field effect transistors electricallyconnected in series between a first end and a second end of theinductor, and the first and second p-type field effect transistortransistors electrically connected in series between the first end andthe second end of the inductor; and a control circuit configured toselectively open or close the plurality of switches to control aninductor current through the inductor, the control circuit furtherconfigured to selectively activate the bypass circuit to reduce ringingof the inductor current.
 3. The voltage conversion system of claim 2wherein a drain of the first p-type field effect transistor iselectrically connected to a source of the first n-type field effecttransistor, to a drain of the second n-type field effect transistor, andto a source of the second p-type field effect transistor.
 4. The voltageconversion system of claim 2 wherein a body of the first p-type fieldeffect transistor is electrically connected to a first voltage and abody of the second p-type field effect transistor is electricallyconnected to a second voltage greater than the first voltage.
 5. Thevoltage conversion system of claim 2 wherein a body of the first n-typefield effect transistor is electrically connected to a ground voltageand a body of the second n-type field effect transistor is electricallyconnected to a switchable voltage, the switchable voltage having avoltage level that changes based on a state of a protection controlsignal.
 6. The voltage conversion system of claim 5 wherein theswitchable voltage switches between the ground voltage and a low dropout (LDO) voltage based on the state of the protection control signal.7. The voltage conversion system of claim 2 further comprising a firstlevel shifter and a second level shifter, the first level shifterincluding a first output that controls a gate voltage of the firstp-type field effect transistor and a second output that controls a gatevoltage of the first n-type field effect transistor, the second levelshifter including a first output that controls a gate voltage of thesecond p-type field effect transistor and a second output that controlsa gate voltage of the second n-type field effect transistor.
 8. Thevoltage conversion system of claim 7 wherein the first level shifter ispowered by a battery voltage and a ground voltage, and the second levelshifter is powered by a boost voltage and a switchable voltage.
 9. Thevoltage conversion system of claim 8 wherein the switchable voltageswitches between the ground voltage and a low drop out (LDO) voltagebased on a state of a protection control signal.
 10. The voltageconversion system of claim 2 further comprising a battery that generatesa battery voltage, the voltage converter configured to generate at leastone output voltage based on converting the battery voltage.
 11. Thevoltage conversion system of claim 10 wherein the at least one outputvoltage includes a boost voltage having a voltage level greater than thebattery voltage.
 12. The voltage conversion system of claim 10 whereinthe plurality of switches includes a first switch, a second switch, athird switch, and a fourth switch, the first switch including a firstend that receives the battery voltage and a second end electricallyconnected to the first end of the inductor, the second switch includinga first end electrically connected to the first end of the inductor anda second end electrically connected to a ground voltage, the thirdswitch including a first end electrically connected to the second end ofthe inductor and a second end electrically connected to the groundvoltage, and the fourth switch including a first end electricallyconnected to the second end of the inductor and a second end configuredto generate a first output voltage of the at least one output voltage.13. A method of voltage conversion, the method comprising: receiving abattery voltage at an input of a voltage converter, the voltageconverter including an inductor, a plurality of switches, and a bypasscircuit; converting the battery voltage to at least one output voltageby controlling an inductor current through the inductor using theplurality of switches; and activating the bypass circuit to reduceringing of the inductor current, the bypass circuit including a firstp-type field effect transistor, a second p-type field effect transistor,a first n-type field effect transistor, and a second n-type field effecttransistor, the first and second n-type field effect transistorselectrically connected in series between a first end and a second end ofthe inductor, and the first and second p-type field effect transistortransistors electrically connected in series between the first end andthe second end of the inductor.
 14. The method of claim 13 furthercomprising biasing a body of the first p-type field effect transistorwith a first voltage and biasing a body of the second p-type fieldeffect transistor with a second voltage that is greater than the firstvoltage.
 15. The method of claim 13 further comprising biasing a body ofthe first n-type field effect transistor to a ground voltage, biasing abody of the second n-type field effect transistor to a switchablevoltage, and controlling a voltage level of the switchable voltage basedon a state of a protection control signal.
 16. The method of claim 13controlling a gate voltage of the first p-type field effect transistorand a gate voltage of the first n-type field effect transistor using afirst level shifter, and controlling a gate voltage of the second p-typefield effect transistor and a gate voltage of the second n-type fieldeffect transistor using a second level shifter.
 17. The method of claim16 further comprising powering the first level shifter using a batteryvoltage and a ground voltage, powering the second level shifter using aboost voltage and a switchable voltage, and controlling a voltage levelof the switchable voltage based on a state of a protection controlsignal.
 18. A wireless device comprising: a battery that generates abattery voltage; a voltage converter configured to receive the batteryvoltage and to generate at least one output voltage, the voltageconverter including an inductor, a plurality of switches, and a bypasscircuit, the bypass circuit including a first p-type field effecttransistor, a second p-type field effect transistor, a first n-typefield effect transistor, and a second n-type field effect transistor,the first and second n-type field effect transistors electricallyconnected in series between a first end and a second end of theinductor, and the first and second p-type field effect transistortransistors electrically connected in series between the first end andthe second end of the inductor; and a control circuit configured toselectively open or close the plurality of switches to control aninductor current through the inductor, the control circuit furtherconfigured to selectively activate the bypass circuit to reduce ringingof the inductor current.
 19. The wireless device of claim 18 furthercomprising: a power amplifier configured to amplify a radio frequencysignal; and an envelope tracker configured to control a voltage level ofa power amplifier supply voltage of the power amplifier based on anenvelope of the radio frequency signal, the envelope tracker includingthe voltage converter.
 20. The wireless device of claim 19 wherein adrain of the first p-type field effect transistor is electricallyconnected to a source of the first n-type field effect transistor, to adrain of the second n-type field effect transistor, and to a source ofthe second p-type field effect transistor.
 21. The wireless device ofclaim 19 wherein a body of the first p-type field effect transistor iselectrically connected to a first voltage and a body of the secondp-type field effect transistor is electrically connected to a secondvoltage greater than the first voltage.